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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process. A KTX303U EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE B B1 1 5 2 3 4 D DIM A A1 B B1 C D G H T EQUIVALENT CIRCUIT (TOP VIEW) Marking 5 4 5 T G MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25+ 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 Type Name 4 1. D 1 2. Q 1 3. Q 1 4. Q 1 5. D 1 H C A1 C D1 Q1 CI 1 2 3 ANODE BASE EMITTER COLLECTOR CATHODE 1 2 3 USV MAXIMUM RATINGS (Ta=25 TRANSISTOR Q1 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg RATING -15 -12 -6 -500 -1 100 150 -55~125 A UNIT V V DIODE (SBD) D1 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM Tj Tstg RATING 30 30 300 200 1 125 -55 125 A UNIT V V 2003. 3. 11 Revision No : 1 1/4 KTX303U ELECTRICAL CHARACTERISTICS (Ta=25 ) TRANSISTOR Q1 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(SAT) fT Cob TEST CONDITION VCB=-15V, IE=0 IE=-10 IC=-1 IE=-10 VCE=-2V, IC=-10 IC=-200 , IB=-10 MIN. -15 -12 -6 270 TYP. -100 260 6.5 MAX. -100 680 -250 V V V UNIT VCE=-2V, IC=-10 , f=100 VCB=-10V, IE=0, f=1 DIODE (SBD) D1 CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) VF(4) Reverse Current Total Capacitance IR CT IF=1mA IF=10mA IF=100mA IF=200mA VR=30V VR=0, f=1 TEST CONDITION MIN. TYP. 0.22 0.29 0.38 0.43 50 MAX. 0.55 50 V UNIT 2003. 3. 11 Revision No : 1 2/4 KTX303U Q 1 (PNP TRANSISTOR) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 I C /IB =20 100 50 30 VCE =-2V C 125 Ta= 25 C C Ta= =-40 Ta 10 -1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 I C /IB =50 I C /IB =20 I C /IB =10 VBE(sat) - I C -10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -5K -3K I C /IB =20 Ta=25 C -1K -500 -300 Ta=-40 C Ta=25 C C Ta=125 -100 -1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - VBE TRANSITION FREQUENCY f T (MHz) -1K COLLECTOR CURRENT I C (mA) -500 -300 -100 Ta=1 25 C Ta=2 5C Ta=40 C VCE =-2V fT - IC 1K 500 300 VCE =-2V Ta=25 C -50 -30 -10 -5 -3 -1 0 100 50 30 -0.5 -1.0 -1.5 10 -1 -3 -10 -30 -100 -300 -1K BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) 2003. 3. 11 Revision No : 1 3/4 KTX303U C ob - VCB , C ib - VEB COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) 1K 500 300 100 50 30 10 5 3 1 -0.1 C ob I E =0A f=1MHz Ta=25 C C ib -0.3 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) D 1 (SBD) I F - VF FORWARD CURRENT I F (mA) REVERSE CURRENT I R (A) 10 10 1 10 -1 10 -2 10 -3 10 -4 0 100 200 300 400 500 2 IR 10 5 Ta=25 C - VR Ta=25 C 1 0.5 0 5 10 15 20 25 FORWARD VOLTAGE V F (mV) REVERSE VOLTAGE VR (V) C T - VR 100 TOTAL CAPACITANCE C T (pF) 50 Ta=25 C f=1MHz 10 5 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V) 2003. 3. 11 Revision No : 1 4/4 |
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